EBeam Lithographer

Tender description

The University has a requirement for an Electron Beam lithography system which has an acceleration voltage of at least 200 kV. It must be capable of the following: a) Ultra-fine line lithography: 3 nm linewidth, using commercially available resists. This can be obtained by its single-nm digit beam diameter. b) Ultra-high position accuracy: This can be obtained by a laser interferometer with Å (sub-1 nm) reading resolution, enabling a stitching accuracy of ±8 nm and overlay accuracy of ±8 nm. c) Uniform fine pattern writing over entire field: Uniform nm-scale lines can be drawn from edge to edge across a large field (≥2000μm) without the need for stitching. This guarantees better accuracy, eliminates the need for stage movement, and enhances writing speed and throughput. d) High throughput lithography: This will be enabled by a 125 MHz (or higher) high-speed deflection system coupled with a new electron beam column design. e) Wafer scale (& multi wafer) processing: Single cassette auto-loader supporting 8-inch wafers with a multi-cassette automatic sample loading system. Fast loading and pumping time. f) Flexibility in sample holders: Offer the ability to simultaneously handle a variety of wafer sizes by incorporating distinct holders for processing full wafers (2-8 inches) and/or small. g) Software: SEM Imaging Software, Alignment Software and CAD designing Software, which allows using and/or converting into industry standard GDSII and DXF file formats. It is believed the JEOL JBX-8100FS G3 Electron Beam Lithography System is the sole machine which complies with these requirements. Therefore, we deem competition is absent for technical reasons. Lot 1: The University has a requirement for an Electron Beam lithography system which has an acceleration voltage of at least 200 kV. It must be capable of the following: a) Ultra-fine line lithography: 3 nm linewidth, using commercially available resists. This can be obtained by its single-nm digit beam diameter. b) Ultra-high position accuracy: This can be obtained by a laser interferometer with Å (sub-1 nm) reading resolution, enabling a stitching accuracy of ±8 nm and overlay accuracy of ±8 nm. c) Uniform fine pattern writing over entire field: Uniform nm-scale lines can be drawn from edge to edge across a large field (≥2000μm) without the need for stitching. This guarantees better accuracy, eliminates the need for stage movement, and enhances writing speed and throughput. d) High throughput lithography: This will be enabled by a 125 MHz (or higher) high-speed deflection system coupled with a new electron beam column design. e) Wafer scale (& multi wafer) processing: Single cassette auto-loader supporting 8-inch wafers with a multi-cassette automatic sample loading system. Fast loading and pumping time. f) Flexibility in sample holders: Offer the ability to simultaneously handle a variety of wafer sizes by incorporating distinct holders for processing full wafers (2-8 inches) and/or small. g) Software: SEM Imaging Software, Alignment Software and CAD designing Software, which allows using and/or converting into industry standard GDSII and DXF file formats. It is believed the JEOL JBX-8100FS G3 Electron Beam Lithography System is the sole machine which complies with these requirements. Therefore, we deem competition is absent for technical reasons.