SEM/FIB

Description

National Cyber Crime Center, Norway will procure a FIB/SEM Dualbeam for material analysis and semiconductor works, including circuit edit. The system must have state of the art electron (SEM) and Ga ion (FIB) column. The SEM column must include in-column SE and BSE detectors, and in-chamber SE and BSE detectors. A EDS detector for elemental analysis must also be included. The FIB must have a SE and a secondary Ion detector. The instrument must have a gas delivery system for both single and multiple gases. Precursors must be available for all deposition and enhanced etching techniques necessary for advanced circuit edit on modern semiconductor processes, including etching of Cu and low-k dielectrics. The system must have various ways of navigating in silicon including software for overlaying GDS and microscope images, in-chamber camera for point and click navigation, and in-chamber microscope with IR illumination capable of imaging through silicon. Lot 1: This describes the key features of the delivery which is necessary to understand the scope of this procurement. — Helios 5 UC Dualbeam FIB/SEM • integrated camera for chamber overview; • integrated camera for sample navigation; • 150 mm Eucentric pieazoelectric stage; • integrated plasma cleaner; • active vibration isolation system; • charge neutralizer; • electrical feed-through to the chamber; • all auxiliary equipment needed by the Dualbeam to operate. — SEM • schottky field emitter beam. Magnetic immersion lens; • acceleration voltage 350 V — 30 kV; • beam current: 0.8 pA — 100 nA; • beam deceleration; • resolution: 0.6 nm at 15 kV-2 kV 0.7 nm at 1 kV with beam deceleration 1.0 nm at 500V with beam deceleration • in-column SE and BSE detectors; • retractable Directional Backscatter; • in-chamber SE detector; • pathfinder Alpine EDS System for elemental analysis. — FIB • field emission liquid Ga ion source; • time of flight correction; • acceleration voltage: 500 V — 30 kV; • beam current: 1.1 pA — 100 nA; • resolution: 4 nm at 30 kV; • ICE secondary ion and electron detector. — Gas Injection System • Single gases for — insulator Enhanced etch (XeF2) for with coaxial nozzle for bulk removal of material; — Enhanced Etch for metal and silicon (I2). • 6 port multichem gas injection system — DX precursor — Insulator Deposition II precursor — Insulator Enhanced Etch (XeF2) precursor — DE Low-k Dielectric Etch Chemistry Precursor — Tungsten Deposition Precursor — In-chamber infrared microscope • can operate simultaneous with normal FIB/SEM operation; • integrated in the software. Can be used for point and click navigation; • resolution in the 1-5um range; • can image through bulk silicon of normal thickness for commercial integrated circuits. — Software • fully integrated controller software for full system operation. • support for bulk removal, deep trenching and cross sectioning. • software for stitching a mosaic of multiple SEM images into one large high-resolution image. • CAD integration for navigation using GDS2 and other design files.