LA3215C-UCC-CFT for the Supply of a Suite of Plasma Etcher and Plasma Deposition Tools, 4 Lots

Description

Tenders are sought for the supply delivery, installation and commissioning of a suite of tools in 4 Lots for silicon-based and dielectric materials for University College Cork. The new plasma tools will enhance the capabilities at the Tyndall National Institute for the fabrication of semiconductor devices, especially silicon microelectronics and silicon MEMS, but also other materials such as germanium and silicon carbide. We invite proposals for the following lots; Lot 1 Plasma Etcher Silicon Dielectrics, advanced plasma etching system capable of etching for polysilicon poly-Si silicon dioxide SiO2 silicon nitride SiN thin films using medium high-density plasma processes. Lot 2 Plasma Etcher Metals Piezoelectrics, advanced plasma etching system capable of etching for aluminium Al and alloys molybdenum Mo aluminium scandium nitride AlScN thin films using medium high-density plasma processes. Lot 3 Plasma Etcher Slow and Controllable Rate Atomic Layer Etch for Silicon Dielectrics, advanced plasma etching system capable of both conventional high-rate etching and slow and controllable rate atomic layer etching for silicon Si silicon dioxide SiO2 silicon nitride SiN thin films using medium high-density plasma processes. Lot 4 Plasma Deposition PECVD, advanced plasma enhanced chemical vapour deposition system capable of depositing dielectric SiO2, SiN and amorphous a-Si thin films on semiconductor substrates. This equipment will be essential for etching and depositing a range of materials used in the fabrication of silicon microelectronics, silicon photonics and silicon MEMS devices. The ideal tools will offer precision, reliability, and efficiency to meet the requirements for etching and deposition on both 100 mm and 200 mm diameter wafers. Tenderers with cutting-edge solutions that can achieve these high standards are encouraged to submit their proposals for this vital component in our technological advancement.