Dual-growth chamber Molecular Beam Epitaxy System (2 Lots)

Description

The EPSRC National Epitaxy Facility (NEF) based at the University of Sheffield has been providing bespoke semiconductor wafers to academia and industry for 45 years. It is a unique world-class centre combining technical excellence and expertise with state-of-the-art epitaxy and material characterization equipment. We are looking to further enhance our capability provision to the UK semiconductor community, by investing in a new linked dual-chamber Molecular Beam Epitaxy (MBE) System for arsenides/phosphides and arsenides/antimonides growth that is fully automated, capable of 24/7 operation, reliable, and resource-efficient allowing further expansion in the future. Lot 1: MBE System The system is replacing two existing VG reactors capable of 4" wafer growth of high-quality arsenides/phosphides and arsenides/antimonides, and should offer higher throughput thanks to automation of growth recipes for 24/7 operation, and integrated solutions allowing maintenance of critical components (such as ion gauges, cells) without breaking chamber vacuum. Lot 2: In-situ monitoring equipment As described within the tender documents