Ka‑Band Module Development & Complex Modulation Measurement Support

Description

Specialist technical input into the DSIT Semiconductor Project: Ka‑Band Module Development and Complex Modulation Measurements, contributing to the development of new measurement capability in high‑frequency RF semiconductor characterisation. The work includes: Characterisation of dielectric properties (e.g., charge mobility, permittivity) of semiconductor materials such as GaAs/GaN from 26.5-40 GHz and up to 330 GHz, including 2D wafer property mapping. Development of on‑wafer modulated‑signal measurement capability, testing QPSK, APSK‑16, APSK‑32 signals with varying input powers, with and without predistortion. Measurement of connectorised devices within an NPL 6G testbed. Provision of Ka‑band die samples, attendance at weekly technical meetings, development tasks, and delivery of a loaned connectorised Ka‑band transmit module. ## Contract award